ferroelectric field effect transistor (FeFET)
A Ferro FET (FeFET) can be considered as a MOSFET where the metal oxide layer between gate and drain and source is replaced by a ferroelectric layer. FeFETs are used for ferroelectric memory cells, where the logic information is stored in the two possible nonvolatile polarization states of the ferroelectric material.
In terms of construction, a ferroelectric memory cell with FeFETs typically consists of a thin ferroelectric dielectric sandwiched between two conductive electrodes. The memory cell is thus equivalent to a 1T1C memory cell (one transistor, one capacitor). The electrodes may consist of two crossing electron strips - the bit line (BL) and the word line (WL). A voltage pulse applied to the ferro-memory determines the polarization state. The read process does not change the polarization state.
During the write process, a voltage is applied between the gate and source whose voltage is higher than the coercive force of the ferroelectric material, whereupon the polarization direction changes.