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ferroelectric field effect transistor (FeFET)

A Ferro FET (FeFET) can be considered as a MOSFET where the metal oxide layer between gate and drain and source is replaced by a ferroelectric layer. FeFETs are used for ferroelectric memory cells, where the logic information is stored in the two possible nonvolatile polarization states of the ferroelectric material.

In terms of construction, a ferroelectric memory cell with FeFETs typically consists of a thin ferroelectric dielectric sandwiched between two conductive electrodes. The memory cell is thus equivalent to a 1T1C memory cell (one transistor, one capacitor). The electrodes may consist of two crossing electron strips - the bit line (BL) and the word line (WL). A voltage pulse applied to the ferro-memory determines the polarization state. The read process does not change the polarization state.

Structure of a ferroelectric FET (FeFET)

Structure of a ferroelectric FET (FeFET)

During the write process, a voltage is applied between the gate and source whose voltage is higher than the coercive force of the ferroelectric material, whereupon the polarization direction changes.

Englisch: ferroelectric field effect transistor - FeFET
Updated at: 25.08.2012
#Words: 162
Links: field effect transistor (FET), metal oxide semiconductor field effect transistor (MOSFET), layer, memory, logic
Translations: DE

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