lateral diffused metal oxid semiconductor (LDMOS)

Lateral Diffused Metal Oxide Semiconductors (LDMOS) are power semiconductors used in RF power amplifiers to amplify transmit signals in the microwave range, e.g. in base stations ofGSM and UMTS networks.

LDMOS semiconductors differ from other transistors by the epitaxial silicon layer and different ion implementations.

LDMOS semiconductors can be used in the microwave range up to several gigahertz. Their average output power can be as high as 50 dBm at frequencies above 2 GHz, and their gain can exceed 15 dB. Peak output powers are achieved that are in the kilowatt range. Since their ratio of peak power to average output power is relatively unfavorable, they are mainly used in mobile networks with the Code Division Multiple Access( CDMA) and Orthogonal Frequency Division Multiple Access( OFDMA) access methods.