universal flash storage (UFS)
Universal Flash Storage(UFS) is a memory card technology developed from scratch to be established as the standard for memory cards. It will meet the requirements of future mobile platforms. It is the successor technology to eMMC.
UFS technology is based on the SCSI architectural model and is characterized by low power and high efficiency. When active, power consumption is low and drops to almost zero when idle. Unlike eMMC cards, UFS cards can operate in full duplex and read and write simultaneously. The 3D NAND memory takes advantage of the benefits offered by Through-Silicon Via( TSV). In UFS version 2.0, UFS technology supports data rates of 350 MB/s for read data and 150 MB/s for write data. In the high-speed versions with multilanes, data rates of 11.6 Gbit/s are achieved.
As for the storage capacity, it depends on the number of dice layers in the 3D NAND. There are 48- layer versions with a memory capacity of 16 GB. 3D NANDs with triple- level cells( TLC), which works with three bits per cell, double the storage capacity.
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UFS technology uses serial data transmission over up to four lanes. The clock rate is 50 MHz. Transmission between host and UFS card supports pulse width modulation( PWM) and NRZ encoding. The MIPI Alliance has defined various standards for the serial interface: D- PHY, C-PHY and M-PHY. D-PHY supports data rates of 1 Gbit/s per lane and M-PHY 1.25 Gbit/s/1.5 Gbit/s and offers further options (V1.2) for 2.5 Gbit/s/3 Gbit/s and for 5 Gbit/s/6 Gbit/s per lane. With four lanes and a data rate of 2.5 Gbit/s, data rates of 10 Gbit/s are achieved. The situation is different with C-PHY, which works with serial 3- wire lanes and achieves 17.1 Gbit/s with three lanes.
UFS memory card technology and standardization offers a uniform memory card format and is intended to replace the various other formats. The technology is supported by well-known companies in the memory and chip industry and is controlled by JEDEC.