breakthrough in small signal (transistor) (BISS)

Years ago, bipolar transistors were inferior to MOSFETs in several respects in switching applications. Thanks to recent developments and significant improvements in saturation resistance and power spectrum, the range of applications for bipolar transistors has been significantly expanded. For example, newer medium-power bipolar transistors can be used in circuits in mobile devices, consumer electronics equipment and communications technology. They are characterized by high performance and low switching losses.

This development has been achieved by increasing homogenization of current distribution in semiconductors, which has reduced saturation resistances. These newly developed bipolar transistors are called BISS transistors, which stands for Breakthrough in Small Signal,.

Medium-power bipolar transistors are bipolar transistors with ultra-low control voltages, low collector-emitter saturation voltage and low collector-emitter resistances, which are only about 10 milli-ohms. They have low power dissipation, low consumption, and high current gain at high collector currents. In addition to those mentioned, there are also the BISS transistors optimized for switching applications, which are characterized by switching times of about 100 ns.